-
1
-
-
0036493244
-
Illumination with solid state lighting technology
-
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with solid state lighting technology," IEEE J. Sel. Topics Quantum Electron., vol.8, no.2, pp. 310-320, Mar./Apr. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.2
, pp. 310-320
-
-
Steigerwald, D.A.1
Bhat, J.C.2
Collins, D.3
Fletcher, R.M.4
Holcomb, M.O.5
Ludowise, M.J.6
Martin, P.S.7
Rudaz, S.L.8
-
3
-
-
0000217584
-
Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode
-
A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, "Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode," Appl, Phys. Lett., vol.78, pp. 563-565, Jan. 2001.
-
(2001)
Appl, Phys. Lett.
, vol.78
, pp. 563-565
-
-
Erchak, A.A.1
Ripin, D.J.2
Fan, S.3
Rakich, P.4
Joannopoulos, J.D.5
Ippen, E.P.6
Petrich, G.S.7
Kolodziejski, L.A.8
-
4
-
-
1242307343
-
Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal
-
H. Ichikawa and T. Bába, "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal," Appl Phys. Lett, vol.84, pp. 457-459, Jan. 2004.
-
(2004)
Appl Phys. Lett.
, vol.84
, pp. 457-459
-
-
Ichikawa, H.1
Bába, T.2
-
5
-
-
7544242736
-
High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal
-
K. Orita, S. Tamura, T. Takizawa, T. Ueda, M. Yuri, S. Takigawa, and D. Ueda, "High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal," J. Jpn. Appl. Phys., vol.43, pp. 5809-5813, Aug. 2004.
-
(2004)
J. Jpn. Appl. Phys.
, vol.43
, pp. 5809-5813
-
-
Orita, K.1
Tamura, S.2
Takizawa, T.3
Ueda, T.4
Yuri, M.5
Takigawa, S.6
Ueda, D.7
-
6
-
-
33645528374
-
Photonic crystal laser lift-off GaN light-emitting diodes
-
A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, "Photonic crystal laser lift-off GaN light-emitting diodes," Appl. Phys. Lett, vol.88, pp. 133514-133520, Mar. 2006.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 133514-133520
-
-
David, A.1
Fujii, T.2
Moran, B.3
Nakamura, S.4
Denbaars, S.P.5
Weisbuch, C.6
Benisty, H.7
-
7
-
-
1542315187
-
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
-
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett, vol.84, pp. 855-857, Feb. 2004.
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 855-857
-
-
Fujii, T.1
Gao, Y.2
Sharma, R.3
Hu, E.L.4
Denbaars, S.P.5
Nakamura, S.6
-
8
-
-
15544376932
-
High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD
-
Mar
-
T. Egawa, B. Zhang, and H. Ishikawa, "High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD," IEEE Electron Device Lett, vol.26, no.3, pp. 169-171, Mar. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.3
, pp. 169-171
-
-
Egawa, T.1
Zhang, B.2
Ishikawa, H.3
-
9
-
-
0038398939
-
High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AIN/GaN multilayers with a thin AIN/AIGaN buffer layer
-
B. Zhang, T. Egawa, H. Ishikawa, Y. Liu, and T. Jimbo, "High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AIN/GaN multilayers with a thin AIN/AIGaN buffer layer," J. Jpn. Appl. Phys., vol.42, pp. L226-228, Mar. 2003.
-
(2003)
J. Jpn. Appl. Phys.
, vol.42
, pp. 226-228
-
-
Zhang, B.1
Egawa, T.2
Ishikawa, H.3
Liu, Y.4
Jimbo, T.5
-
10
-
-
0027554254
-
The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer
-
A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Iiiramatsu, and I. Akasaki, "The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer," J. Cryst Growth, vol.128, pp. 391-396, Mar. 1993.
-
(1993)
J. Cryst Growth
, vol.128
, pp. 391-396
-
-
Watanabe, A.1
Takeuchi, T.2
Hirosawa, K.3
Amano, H.4
Iiiramatsu, K.5
Akasaki, I.6
-
11
-
-
0035851454
-
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
-
E. Feltiii, B. Beaumont, M. Laugt, P. de mierry, P. Vennegu.es, H. Lahreche, M. Leroux, and P. Gibart, "Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol.79, pp. 3230-3232, Aug. 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 3230-3232
-
-
Feltiii, E.1
Beaumont, B.2
Laugt, M.3
De Mierry, P.4
Vennegues, P.5
Lahreche, H.6
Leroux, M.7
Gibart, P.8
-
12
-
-
0032598144
-
Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth
-
H. Lahreche, P. Vennegues, B. Beaumont, and P. Gibart, "Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth," J. Cryst. Growth, vol.205, pp. 245-251, Sep. 1999.
-
(1999)
J. Cryst. Growth
, vol.205
, pp. 245-251
-
-
Lahreche, H.1
Vennegues, P.2
Beaumont, B.3
Gibart, P.4
-
13
-
-
0034504519
-
Drastic reduction of threading dislocations in GaN regrown on grooved stripe structure
-
M. Ishida, M. Ogawa, K. Orita, O. Imafuji, M. Yuri, T. Sugino, and K. Itoh, "Drastic reduction of threading dislocations in GaN regrown on grooved stripe structure," J. Cryst. Growth, vol.221, pp. 345-349, Dec. 2000.
-
(2000)
J. Cryst. Growth
, vol.221
, pp. 345-349
-
-
Ishida, M.1
Ogawa, M.2
Orita, K.3
Imafuji, O.4
Yuri, M.5
Sugino, T.6
Itoh, K.7
-
14
-
-
0019576239
-
Method for determining effective nonradiative lifetime and. leakage losses in double-heterostructure lasers
-
C. van Odorp and G. W. 't Hooft, "Method for determining effective nonradiative lifetime and. leakage losses in double-heterostructure lasers," J. Appl. Phys., vol.52, pp. 3827-3839, Feb. 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 3827-3839
-
-
Van Odorp, C.1
'T Hooft, G.W.2
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