메뉴 건너뛰기




Volumn 44, Issue 10, 2008, Pages 984-989

Integration of photonic crystals on GaN-based blue LEDs using silicon mold substrates

Author keywords

Gallium nitride; Light emitting diode (led); Photonic crystal; Silicon substrate

Indexed keywords

BLUE LEDS; BLUE LIGHT-EMITTING; DISLOCATION DENSITIES; LATERAL EPITAXIAL GROWTHS; LIGHT EXTRACTION; LIGHT-EMITTING DIODE (LED); NOVEL METHODS; OPTICAL OUTPUT POWER; SI SUBSTRATES; SILICON MOLDS; SILICON SUBSTRATE; SILICON SUBSTRATES; SURFACE FREE; TRANSFER TECHNIQUE;

EID: 70349752447     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2000912     Document Type: Article
Times cited : (10)

References (14)
  • 4
    • 1242307343 scopus 로고    scopus 로고
    • Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal
    • H. Ichikawa and T. Bába, "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal," Appl Phys. Lett, vol.84, pp. 457-459, Jan. 2004.
    • (2004) Appl Phys. Lett. , vol.84 , pp. 457-459
    • Ichikawa, H.1    Bába, T.2
  • 5
    • 7544242736 scopus 로고    scopus 로고
    • High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal
    • K. Orita, S. Tamura, T. Takizawa, T. Ueda, M. Yuri, S. Takigawa, and D. Ueda, "High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal," J. Jpn. Appl. Phys., vol.43, pp. 5809-5813, Aug. 2004.
    • (2004) J. Jpn. Appl. Phys. , vol.43 , pp. 5809-5813
    • Orita, K.1    Tamura, S.2    Takizawa, T.3    Ueda, T.4    Yuri, M.5    Takigawa, S.6    Ueda, D.7
  • 7
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett, vol.84, pp. 855-857, Feb. 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 855-857
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    Denbaars, S.P.5    Nakamura, S.6
  • 8
    • 15544376932 scopus 로고    scopus 로고
    • High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD
    • Mar
    • T. Egawa, B. Zhang, and H. Ishikawa, "High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD," IEEE Electron Device Lett, vol.26, no.3, pp. 169-171, Mar. 2005.
    • (2005) IEEE Electron Device Lett , vol.26 , Issue.3 , pp. 169-171
    • Egawa, T.1    Zhang, B.2    Ishikawa, H.3
  • 9
    • 0038398939 scopus 로고    scopus 로고
    • High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AIN/GaN multilayers with a thin AIN/AIGaN buffer layer
    • B. Zhang, T. Egawa, H. Ishikawa, Y. Liu, and T. Jimbo, "High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AIN/GaN multilayers with a thin AIN/AIGaN buffer layer," J. Jpn. Appl. Phys., vol.42, pp. L226-228, Mar. 2003.
    • (2003) J. Jpn. Appl. Phys. , vol.42 , pp. 226-228
    • Zhang, B.1    Egawa, T.2    Ishikawa, H.3    Liu, Y.4    Jimbo, T.5
  • 10
    • 0027554254 scopus 로고
    • The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer
    • A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Iiiramatsu, and I. Akasaki, "The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer," J. Cryst Growth, vol.128, pp. 391-396, Mar. 1993.
    • (1993) J. Cryst Growth , vol.128 , pp. 391-396
    • Watanabe, A.1    Takeuchi, T.2    Hirosawa, K.3    Amano, H.4    Iiiramatsu, K.5    Akasaki, I.6
  • 12
    • 0032598144 scopus 로고    scopus 로고
    • Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth
    • H. Lahreche, P. Vennegues, B. Beaumont, and P. Gibart, "Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth," J. Cryst. Growth, vol.205, pp. 245-251, Sep. 1999.
    • (1999) J. Cryst. Growth , vol.205 , pp. 245-251
    • Lahreche, H.1    Vennegues, P.2    Beaumont, B.3    Gibart, P.4
  • 13
    • 0034504519 scopus 로고    scopus 로고
    • Drastic reduction of threading dislocations in GaN regrown on grooved stripe structure
    • M. Ishida, M. Ogawa, K. Orita, O. Imafuji, M. Yuri, T. Sugino, and K. Itoh, "Drastic reduction of threading dislocations in GaN regrown on grooved stripe structure," J. Cryst. Growth, vol.221, pp. 345-349, Dec. 2000.
    • (2000) J. Cryst. Growth , vol.221 , pp. 345-349
    • Ishida, M.1    Ogawa, M.2    Orita, K.3    Imafuji, O.4    Yuri, M.5    Sugino, T.6    Itoh, K.7
  • 14
    • 0019576239 scopus 로고
    • Method for determining effective nonradiative lifetime and. leakage losses in double-heterostructure lasers
    • C. van Odorp and G. W. 't Hooft, "Method for determining effective nonradiative lifetime and. leakage losses in double-heterostructure lasers," J. Appl. Phys., vol.52, pp. 3827-3839, Feb. 1981.
    • (1981) J. Appl. Phys. , vol.52 , pp. 3827-3839
    • Van Odorp, C.1    'T Hooft, G.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.