Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Fleming, R M ^a   Myers, S M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED ABSORPTION; INTERSTITIAL MOTION; MGH DEFECT; MOBILE NITROGEN INTERSTITIAL;

ADSORPTION; CONCENTRATION (PROCESS); GALLIUM NITRIDE; POINT DEFECTS; PROTONS; RAPID THERMAL ANNEALING;

THIN FILMS;

EID: 33748304524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207554     Document Type: Article

References (10)

1. A. F. Wright, J. Appl. Phys. 90, 6526 (2001).
2. A. F. Wright and T. R. Mattsson, J. Appl. Phys. 96, 2015 (2004).
3. Sukit Limpijumnong and Chris G. Van de Walle, Phys. Rev. B 69, 035207 (2004).
4. S. M. Myers and C. H. Seager, J. Appl. Phys. 97, 093517 (2005).
5. R. R. Wixom and A. F. Wright, J. Appl. Phys. 98, 33707 (2005).
6. R. R. Wixom and A. F. Wright, Phys. Rev. B 72, 024114 (2005).
7. K. H. Chow, G. D. Watkins, A. Usui, and M. Mizuta, Phys. Rev. Lett. 85, 2761 (2000).
8. S. M. Myers, A. F. Wright, G. A. Petersen, C. H. Seager, W. R. Wampler, M. H. Crawford, and J. Han, J. Appl. Phys. 88, 4676 (2000).
9. S. M. Myers, A. F. Wright, S. K. Estreicher, and M. Sanati, J. Appl. Phys. (in press).
10. R. R. Wixom (private communication).