SCOPUS 정보 검색 플랫폼

Proceedings of International Meeting on Information Display

Volumn 8, Issue , 2008, Pages 1208-1211

Photofield-Effect in Amorphous InGaZnO TFTs

(8) Fung, Tze Ching a Chuang, Chiao Shun c Mullins, Barry G a Nomura, Kenji b Kamiya, Toshio b Shieh, Han Ping David c Hosono, Hideo b Kanicki, Jerzy a

a UNIVERSITY OF MICHIGAN (United States)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

InGaZnO; Metal oxide semiconductor; Photofield effect; TFT

Indexed keywords

A-SI:H; DENSITY-OF-STATES; EFFECT ANALYSIS; FIELD-EFFECT MOBILITIES; INGAZNO; LIGHT INTENSITY; METAL OXIDE SEMICONDUCTOR; MONOCHROMATIC ILLUMINATION; PHOTOFIELD EFFECT; SUBTHRESHOLD SWING; SWITCHING PROPERTIES; TFT;

CHARGE COUPLED DEVICES; CHARGE TRAPPING; DRAIN CURRENT; METALLIC COMPOUNDS; MOS DEVICES; SMELTING; TRANSISTORS; ZINC;

THIN FILM TRANSISTORS;

EID: 65649087119 PISSN: 17387558 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.