Design of a GaN UV integrated photoreceiver

Opto-Electronics Review

Volumn 12, Issue 1, 2004, Pages 165-168

  Wiatrowski, A ^a   Boratynski, B ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

GaN; HFET; Integrated photoreceiver; MSM

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; FREQUENCY RESPONSE; GALLIUM NITRIDE; INTEGRATION; PHOTODETECTORS; PHOTOLITHOGRAPHY; PLASMAS; SCHOTTKY BARRIER DIODES;

HFET; INTEGRATED PHOTORECEIVER; MONOLITHIC INTEGRATION; MSM;

INTEGRATED OPTOELECTRONICS;

EID: 2342575533     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (4)

1. B. Boratynski and W. Strupinski, "High temperature electronics", Proc. Nat. Electronic Conf. 12, KKE Kołobrzeg, 691-696 (2003).
2. G.K. Reeves, "Specific contact resistance using a circular transmission line model", Solid State Electronics 23, 487-490 (1980).
3. K. Honkanen, "Fabrication and modelling of SOI and GaAs MSM photodetectors and a GaAs-based integrated photoreceiver", Ph.D. Thesis, Helsinki University of Technology, Helsinki 2001.
4. P.H. Ladbroke, MMIC Design GaAs FET's and HEMT's, Artech House Inc., New York, 1989.