Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2030-2033

  Shiojima, Kenji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844457178     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590866     Document Type: Article

References (2)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 60, 2917 (1992).