Interface roughness effect on density of states and mobility of narrow Si/Si1-xGex quantum wells: Path-integral approach

Journal of Physics D: Applied Physics

Volumn 42, Issue 19, 2009, Pages

  Thongnum, A ^a   Pinsook, U ^b,c   Sa Yakanit, V ^b  

^a SRINAKHARINWIROT UNIVERSITY   (Thailand)

^b CHULALONGKORN UNIVERSITY   (Thailand)

^c Thailand Ministry of Science and Technology   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; EIGEN-VALUE; EXPERIMENTAL DATA; IN-PLANE; IN-PLANE DIRECTION; INFINITE BARRIERS; INTERFACE ROUGHNESS; LOCALIZED STATE; PATH INTEGRAL; PATH-INTEGRAL THEORY; QUANTUM WELL; RANDOM VARIATION; THEORETICAL APPROACH; TWO-DIMENSIONAL HOLE GAS; WAVE FUNCTION METHOD; WELL WIDTH;

EIGENVALUES AND EIGENFUNCTIONS; GERMANIUM; MOLECULAR VIBRATIONS; SEMICONDUCTOR QUANTUM WELLS;

HOLE MOBILITY;

EID: 70350633295     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/19/195101     Document Type: Article

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