Theory of the channel-width dependence of the low-temperature hole mobility in Ge-rich narrow square Si/SiGe/Si quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 7, 2007, Pages

  Quang, Doan Nhat ^a   Tung, Nguyen Huyen ^b   Hien, Do Thi ^c   Huy, Huynh Anh ^d  

^a GRADUATE UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

^b HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

^c INSTITUTE OF PHYSICS   (Viet Nam)

^d CAN THO UNIVERSITY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847181201     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.073305     Document Type: Article

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