Interface roughness scattering limited mobility in AlAs/GaAs, Al0.3Ga0.7As/GaAs and Ga0.5In0.5P/GaAs quantum wells

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 162-166

  Nag, B R ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ASPERITY HEIGHT; GAUSSIAN EIGENVALUE; GAUSSIAN WAVEFUNCTION; INTERFACE ROUGHNESS SCATTERING;

EIGENVALUES AND EIGENFUNCTIONS; ELECTRON MOBILITY; ELECTRON SCATTERING; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; WAVEFORM ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242333090     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/006     Document Type: Article

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