Interwell relaxation times in p-Si SiGe asymmetric quantum well structures: Role of interface roughness

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 4, 2007, Pages

  Califano, Marco ^a   Vinh, N Q ^b   Phillips, P J ^c   Ikonic Z ^a   Kelsall, R W ^a   Harrison, P ^a   Pidgeon, C R ^c   Murdin, B N ^d   Paul, D J ^e   Townsend, P ^e   Zhang, J ^f   Ross, I M ^g   Cullis, A G ^g  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^c HERIOT WATT UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF SURREY   (United Kingdom)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^f IMPERIAL COLLEGE LONDON   (United Kingdom)

^g UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846538477     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.045338     Document Type: Article

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