A model for scattering due to interface roughness in finite quantum wells

Semiconductor Science and Technology

Volumn 20, Issue 12, 2005, Pages 1207-1212

  Li, J M ^a   Wu, J J ^a   Han, X X ^a   Lu, Y W ^b   Liu, X L ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DATABASE SYSTEMS; SCATTERING; SURFACE ROUGHNESS;

BOLTZMAN TRANSPORT EQUATIONS; FINITE BARRIER HEIGHTS; INTERFACE ROUGHNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27944458501     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/20/12/011     Document Type: Article

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