Analysis and simulation of Au/InSb/InP diode C-V characteristic: Modeling and experiments

Materials Science and Engineering C

Volumn 21, Issue 1-2, 2002, Pages 291-296

  Akkal, B ^a   Benamara, Z ^b   Gruzza, B ^a   Bideux, L ^a   Bachir Bouiadjra, N ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

Author keywords

Au InSb InP(100) Schottky diodes; Energy density distribution; Relaxation time

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; EVAPORATION; GOLD; HEATING; INDIUM COMPOUNDS;

ENERGY DENSITY DISTRIBUTION;

DIODES;

ENERGY;

EID: 0036740958     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(02)00083-8     Document Type: Article

References (16)