Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)

Journal of Applied Physics

Volumn 81, Issue 8, 1997, Pages 3501-3511

  Desjardins, P ^a,b   Marchand, H ^a,c   Isnard, L ^a   Masut, R A ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012812675     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365049     Document Type: Article

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