Theory and experiment of suppressed shot noise in stress-induced leakage currents

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1363-1369

  Iannaccone, Giuseppe ^a   Crupi, Felice ^b   Neri, Bruno ^a   Lombardo, Salvatore ^c  

^a UNIVERSITY OF PISA   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

^c CNR   (Italy)

Author keywords

Leakage currents; MOS devices; Semiconductor device reliability; Shot noise; Tunneling

Indexed keywords

COMPUTER SIMULATION; ELASTICITY; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDES; RELIABILITY; SHOT NOISE;

POISSONIAN PROCESS; TUNNELING CURRENT;

MOS CAPACITORS;

EID: 0042490771     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812500     Document Type: Article

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