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Volumn 84, Issue 9-10, 2007, Pages 2382-2385

Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs

Author keywords

Green's function; Low frequency noise; Trap profiles

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GREEN'S FUNCTION; MATHEMATICAL MODELS; MOSFET DEVICES; THIN FILM TRANSISTORS;

EID: 34248671406     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.099     Document Type: Article
Times cited : (3)

References (9)
  • 2
    • 0033169532 scopus 로고    scopus 로고
    • Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs
    • Ahmed K., Ibok E., Yeap G.C.-F., Qi Xiang Ogle B., Wortman J.J., and Hauser N.C. Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs. IEEE Trans. Electron Dev. 46 (1999) 1650-1655
    • (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 1650-1655
    • Ahmed, K.1    Ibok, E.2    Yeap, G.C.-F.3    Qi Xiang Ogle, B.4    Wortman, J.J.5    Hauser, N.C.6
  • 4
    • 34248677438 scopus 로고    scopus 로고
    • F. Martinez, C. Leyris, M. Valenza, A. Hoffmann, F. Boeuf, T. Skotnicki, M. Bidaud, D. Barge, B. Tavel, Effect of oxide thickness and nitridation process on PMOS gate and drain low frequency noise, Proc. ICNF 2005.
  • 5
    • 33749462812 scopus 로고    scopus 로고
    • J. Jomaah and G. Ghibaudo, Low frequency noise in Si-based MOS devices, Proc. ICNF 2005, 181-186.
  • 6
    • 34248651687 scopus 로고    scopus 로고
    • G. Neau, F. Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, F. Boeuf, F. Payet, K. Rochereau, Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs, Proc. ULIS Conf.
  • 7
    • 0038575148 scopus 로고    scopus 로고
    • Fan-Chi Hou, Gijs Bosman, Mark E, Simulation of trapping noise in submicron n-channel MOSFETs, IEEE Trans. Electron Dev. 50 (2003) 846-852.
  • 8
    • 34248666260 scopus 로고    scopus 로고
    • M. Marin, J.C. Vildeuil, B. Tavel, B. Duriez, F. Arnaud, M. Stolk, M. Woo, Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization, ICNF 2005.
  • 9
    • 34248679155 scopus 로고    scopus 로고
    • F. Bonani and G. Ghione, Noise in Semiconductor Devives, Springer Series in Advanced Microelectronics 2001.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.