High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

IEEE Photonics Technology Letters

Volumn 14, Issue 7, 2002, Pages 887-889

  Sharma, T K ^a,b   Zorn, M ^a   Bugge, F ^a   Hulsewede R ^a   Erbert, G ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Highly strained InGaAs quantum well laser; MAN; MOVPE; WAN

Indexed keywords

CURRENT DENSITY; HIGH POWER LASERS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVEGUIDES; WIDE AREA NETWORKS;

LOW GROWTH TEMPERATURES;

QUANTUM WELL LASERS;

EID: 0036648318     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1012374     Document Type: Article

References (15)

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4. 0.8As grown on GaAs substrates
5. The present status of quantum dot lasers
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7. Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 μm
8. Low-threshold high-temperature operation of 1.2 micron InGaAs vertical cavity lasers
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10. High temperature characteristics of nearly 1.2-μm GaInAs/GaAs/AlGaAs lasers
11. Growth of highly strained GaInAs/GaAs quantum wells for 1.2-μm wavelength lasers
12. 1.2-μm GaAsP/InGaAs strain compensated single-quantum well diode laser on GaAs using metal-organic chemical vapor deposition
13. MOVPE growth of highly strained InGaAs/GaAs quantum wells
14. Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm
15. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2-μm