Output power and its limitation in ridge-waveguide 1.3 μm wavelength quantum-dot lasers

Semiconductor Science and Technology

Volumn 18, Issue 8, 2003, Pages 774-781

  Zhukov, A E ^a   Kovsh, A R ^a   Livshits, D A ^a   Ustinov, V M ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; OPTICAL WAVEGUIDES; RELAXATION PROCESSES; SEMICONDUCTOR LASERS; THERMAL EFFECTS; THERMIONIC EMISSION;

EXCITED STATE; QUANTUM DOT LASERS; RIDGE WAVEGUIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041513233     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/8/310     Document Type: Article

References (22)

1. Dingle R and Henry C H 1996 Quantum effects in heterostructure lasers US patent 3982207
2. Arakawa Y and Sakaki H 1982 Multidimensional quantum well laser and temperature dependence of its threshold current Appl. Phys. Lett. 40 939-41
3. Goldstein L, Glas F, Marzin J Y, Charasse M N and Le Roux G 1985 Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices Appl. Phys. Lett. 47 1099-101
4. Leonard D, Krishnamurthy M, Reaves L M, Den Baars S P and Petroff P M 1993 Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces Appl. Phys. Lett. 63 3203-5
5. Park G, Shckekin O B, Huffaker D L and Deppe D G 2000 Low-threshold oxide-confined 1.3-μm quantum-dot laser IEEE Photonics Technol. Lett. 13 230-2
6. Liu G T, Stinz A, Li H, Newell T C, Gray A L, Varangis P M, Malloy K J and Lester L F 2000 The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structure IEEE J. Quantum Electron. 36 1272-9
7. Asryan L V and Suris R A 1996 Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser Semicond. Sci. Technol. 11 554-67
8. Grundmann M and Bimberg D 1997 Theory of random population for quantum dots Phys. Rev. B 55 9740-5
9. Zhukov A E et al 1999 Gain characteristics of quantum dot injection lasers Semicond. Sci. Technol. 14 118-23
10. Zhukov A et al 1999 Continuous wave operation of long-wavelength quantum dot diode laser on a GaAs substrate IEEE Photonics Technol. Lett. 11 1345-7
11. Mikhrin S S et al 2000 A spatially single-mode laser for a range of 1.25-1.28 μm on the basis of InAs quantum dots on a GaAs substrate Semiconductors 34 119-21
12. Maximov M V et al 1999 Single transverse mode operation of long wavelength (∼ 1.3 μm) InAs GaAs quantum dot laser Electron. Lett. 35 2038-9
13. Grundmann M et al 2000 Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications Japan. J. Appl. Phys. 1 39 2341-3
14. Park G, Huffaker D L, Zou Z, Shchekin O B and Deppe D G 1999 Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers IEEE Photonics Technol. Lett. 11 301-3
15. Kovsh A R et al 2002 InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency Electron. Lett. 38 1104-6
16. Benisty H, Sotomayor-Torres C M and Weisbuch C 1991 Intrinsic mechanism for poor luminsecence properties of quantum-box systems Phys. Rev. B 44 10945-8
17. Bimberg D, Grundman M and Ledentsov N N 1999 Quantum Dot Heterostructures (New York: Wiley)
18. Sugawara M, Mukai K and Shoji H 1997 Effect of phonon bottleneck on quantum-dot laser performance Appl. Phys. Lett. 71 2791-3
19. Mukai K, Ohtsuka N, Shoji H and Sugawara M 1996 Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: influence of phonon bottleneck Appl. Phys. Lett. 68 3013-5
20. Kovsh A R, Zhukov A E, Egorov A Yu, Ustinov V M, Ledentsov N N, Maximov M V, Tsatsul'nikov A F and Kop'ev P S 1999 Gain in injection lasers based on self-organized quantum dots Semiconductors 33 184-91
21. Ustinov V M and Zhukov A E 2000 GaAs-based long-wavelength lasers Semicond. Sci. Technol. 15 R41-R54
22. Vimberg D et al 1996 InAs-GaAs quantum dot lasers: in situ growth, radiative lifetimes and polarization properties Japan. J. Appl. Phys. B 35 1311-9