The quantum capacitance limit of high-speed, low-power insb nanowire field effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Khayer, M Abul ^a   Lake, Roger K ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; BAND MODELS; DENSITY OF STATE; ENERGY-DELAY PRODUCTS; GATE DELAYS; GATE-DELAY TIME; HIGH-SPEED; INSB NANOWIRES; LARGE DIAMETERS; LOW-POWER; OPTIMUM DESIGNS; PERFORMANCE METRICS; POWER-DELAY PRODUCTS; QUANTUM CAPACITANCES; ULTRA-LOW-POWER;

BALLISTICS; CAPACITANCE; ELECTRON DEVICES; MESFET DEVICES; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES;

FIELD EFFECT TRANSISTORS;

EID: 64549105649     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796649     Document Type: Conference Paper

References (4)

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