Electrical and hydrogen-sensing characteristics of field effect transistors based on nanorods of ZnO and WO 2.27

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 9, 2009, Pages 5652-5658

  Rout, Chandra Sekhar ^a   Kulkarni, G U ^a   Rao, C N R ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

Doped nanorods; Field effect transistors; H 2 sensors; Mobility; ZnO nanorods

Indexed keywords

AL-DOPING; DEPLETION MODES; DOPED NANORODS; DOPED ZNO; GATE VOLTAGES; GLASS SUBSTRATES; H 2 SENSORS; HIGH SENSITIVITY; HYDROGEN-SENSING; MOBILITY; N-TYPE SEMICONDUCTORS; RECOVERY TIME; SEMICONDUCTOR ELEMENT; TRANSFER CHARACTERISTICS; ZNO; ZNO NANOROD; ZNO NANORODS;

CARRIER MOBILITY; HYDROGEN; MESFET DEVICES; NANORODS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SENSORS; SILICON COMPOUNDS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 70350074445     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1179     Document Type: Conference Paper

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