Structure of amorphous silicon investigated by EXAFS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 199, Issue , 2003, Pages 195-199

  Glover, C J ^a,c   Foran, G J ^b   Ridgway, M C ^c  

^a LUND UNIVERSITY   (Sweden)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Amorphous semiconductors; Extended X ray absorption fine structure spectroscopy; Silicon

Indexed keywords

CRYSTAL STRUCTURE; ION IMPLANTATION; IONS; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SEMICONDUCTORS;

AMORPHOUS SILICON;

EID: 0037243215     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01544-6     Document Type: Conference Paper

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