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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 4197-4203

Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation

(5) Takagi, Hideki a Maeda, Ryutaro a Chung, Teak Ryong b Hosoda, Naoe b Suga, Tadatomo b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

Ar beam; Room temperature bonding; Spontaneous bonding; Surface energy; Surface roughness; Wafer bonding

Indexed keywords

BONDING; SURFACE ROUGHNESS; TEMPERATURE;

SURFACE ENERGY;

SILICON WAFERS;

EID: 0032114543 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4197 Document Type: Article

Times cited : (179)

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