Low-temperature plasma activated bonding for a variable optical attenuator

Sensors and Actuators, A: Physical

Volumn 142, Issue 1, 2008, Pages 413-420

  Schjølberg Henriksen, Kari ^a   Moe, Sigurd ^a   Taklo, Maaike M Visser ^a   Storås, Preben ^a   Ulvensøen, Jon Herman ^b  

^a SINTEF ICT   (Norway)

^b Ignis Photonyx AS   (Norway)

Author keywords

Bond strength; Fracture surface energy; Plasma activated bonding; Variable optical attenuator

Indexed keywords

CHEMICAL BONDS; INTERFACIAL ENERGY; LOW TEMPERATURE OPERATIONS; OPTICAL DEVICES; PARAMETER ESTIMATION; PLASMA ETCHING;

PLASMA ACTIVATED BONDING; PROCESS PARAMETERS; VARIABLE OPTICAL ATTENUATORS;

ELECTRIC ATTENUATORS;

EID: 38949142948     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.02.020     Document Type: Article

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