Time-dependent surface properties and wafer bonding of O2-plasma-treated silicon (100) surfaces

Journal of the Electrochemical Society

Volumn 147, Issue 7, 2000, Pages 2734-2740

  Wiegand, M ^a   Reiche, M ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BOND STRENGTH (CHEMICAL); BONDING; INTERFACES (MATERIALS); OXYGEN; PLASMA APPLICATIONS;

PLASMA TREATMENT; WAFER BONDING;

SILICON WAFERS;

EID: 0034230070     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393597     Document Type: Article

References (14)

1. Q.-Y. Tong and U. Gösele, J. Electrochem. Soc., 143, 1773 (1996).
2. G. Kräuter, A. Schumacher, and U. Gösele, Sens. Actuators A, 70, 271 (1998).
3. G. Kissinger and W. Kissinger, Phys. Status. Solidi. A, 123, 185 (1991).
4. G. Kissinger and W. Kissinger, Sens. Actuators A, 36, 149 (1993).
5. O. Zucker, W. Langheinrich and M. Kulozik, Sens. Actuators A, 36, 227 (1993).
6. S. N. Farrens, J. R. Dekker, J. K. Smith, and B. E. Roberds, J. Electrochem. Soc., 142, 3949 (1995).
7. M. Reiche, K. Gutjahr, D. Stolze, D. Burczyk, and M. Petzold, in Semiconductor Wafer Bonding: Science, Technology and Applications IV, U. Gösele, H. Baumgart, T. Abe, C. Hunt, and S. Iyer, Editors, PV 97-36, The Electrochemical Society Proceedings Series, Pennington, NJ (1997).
8. Y. Bäcklund, K. Hermansson, and L. Smith, J. Electrochem. Soc., 139, 2299 (1992).
9. Handbook of Semiconductor Wafer Cleaning Technology, W. Kern, Editor, Noyes Publications, Park Ridge, NJ (1993).
10. W. P. Maszara, G. Goetz, A. Caviglia, and J. B. Mc Kitterick, J. Appl. Phys., 64, 4943 (1988).
11. F. M. Fowkes, Ind. Eng. Chem., 56(12), 40 (1964).
12. D. K. Owens and R. C. Wendt, J. Appl. Polym. Sci., 13, 1741 (1969).
13. F. K. Hansen and G. Rodsrud, J. Colloid Interface Sci., 141, 1 (1991).
14. K. Mitani, U. Lehmann, R. Stengl, D. Feijoo, U.M. Gösele, and H. Z. Massond, Jpn. J. Appl. Phys., 30, 615 (1991).