Influences of annealing temperature on characteristics of Ge p-channel metal oxide semiconductor field effect transistors with ZrO2 gate dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 7, 2006, Pages 5651-5656

  Kamata, Yoshiki ^a   Kamimuta, Yuuichi ^a   Ino, Tsunehiro ^a   Iijima, Ryosuke ^a   Koyama, Masato ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Activation; Band gap; Germanium; High k; Hole mobility; MOSFET; Valence band offset; Void; ZrO2

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; DIODES; HIGH TEMPERATURE EFFECTS; INTERFACES (COMPUTER); LEAKAGE CURRENTS; ZIRCONIA;

ACTIVATION; HIGH-K; MOSFET; VALENCE BAND OFFSET; VOID;

MOSFET DEVICES;

EID: 33746795845     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5651     Document Type: Article

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