Hydrogen-ion implantation in GaAs

Vacuum

Volumn 63, Issue 4, 2001, Pages 697-700

  Gawlik, G ^a,b   Ratajczak, R ^b   Turos, A ^a,b   Jagielski, J ^a,b   Bedell, S ^c   Lanford, W L ^c  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Blistering; Direct bonding; Ion beam analysis; Ion implantation

Indexed keywords

AGGLOMERATION; ANNEALING; BUBBLES (IN FLUIDS); HYDROGEN; ION BEAMS; ION IMPLANTATION; PRESSURE EFFECTS; RADIATION DAMAGE; SUBSTRATES; THERMAL EFFECTS; VAN DER WAALS FORCES;

BLISTERING; ION BEAM ANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035899249     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00260-3     Document Type: Conference Paper

References (11)