Matrix-seeded growth of nitride semiconductor nanostructures using ion beams

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Weng, X ^a   Ye, W ^a   Clarke, S J ^a   Goldman, R S ^a   Rotberg, V ^a   Daniel, A ^a   Clarke, R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATRIX; GROWTH PROCESSES; LATTICE FRINGES; NANOCRYSTALLITES;

AMORPHIZATION; COMPUTER SIMULATION; DIFFUSION; EPITAXIAL GROWTH; GROWTH KINETICS; ION BEAMS; NANOSTRUCTURED MATERIALS; NITRIDES; NUCLEATION; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 20444477485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1847726     Document Type: Article

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