Ion beam synthesis of GaN precipitates in GaAs

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 10-14

  Amine, S ^a   Ben Assayag, G ^a   Bonafos, C ^a   De Mauduit, B ^a   Hidriss, H ^a   Claverie, A ^a  

^a CEMES CNRS   (France)

Author keywords

Gallium nitride; Ion implantation; Nanoparticles; Ostwald ripening

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; DIFFUSION; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NITROGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SYNTHESIS (CHEMICAL);

OSTWALD RIPENING;

GALLIUM NITRIDE;

EID: 0037198532     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00038-7     Document Type: Conference Paper

References (8)