A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 10, 2009, Pages 1872-1877

  Djeffal, F ^a   Meguellati, M ^a   Benhaya, A ^a  

^a UNIVERSITY OF BATNA   (Algeria)

Author keywords

GCGS DG MOSFET; Nanoscale MOSFETs; Short channel effects; Subthreshold behavior

Indexed keywords

ANALYTICAL ANALYSIS; ANALYTICAL MODEL; CRITICAL PROBLEMS; DG MOSFETS; DIBL EFFECTS; DOUBLE GATE MOSFET; GCGS DG MOSFET; GRADED CHANNELS; NANO SCALE; NANOSCALE MOSFETS; NANOSCALE REGIME; NUMERICAL SIMULATION; POTENTIAL BARRIERS; SCALING CAPABILITY; SHORT-CHANNEL EFFECT; SHORT-CHANNEL-EFFECTS; SUB-THRESHOLD CURRENT; SUBTHRESHOLD; SUBTHRESHOLD BEHAVIOR; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE ROLL-OFF;

GALERKIN METHODS; LOGIC GATES; NANOSTRUCTURED MATERIALS; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 70249104536     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.08.002     Document Type: Article

References (14)

1. Djeffal F., Dibi Z., Hafiane M.L., and Arar D. Materials Science and Engineering C 27 (2007) 1111
2. Djeffal F., Chahdi M., Benhaya A., and Hafiane M.L. Solid-State Electronics 51 (2007) 48
3. Chen Q., Agrawal B., and Meindl J.D. IEEE Transactions on Electron Devices 49 (2002) 1086
4. Djeffal F., Ghoggali Z., Dibi Z., and Lakhdar N. Microelectronics Reliability 49 (2009) 377
5. Abd El-hamid H., Guitart J.R., and Iñíguez B. IEEE Transactions on Electron Devices 54 (2007) 1402
6. Saxena M., Haldar S., Gupta M., and Gupta R.S. Solid-State Electronics 47 (2003) 2131
7. Kaur H., Kabra S., Haldar S., and Gupta R.S. Solid-State Electronics 52 (2008) 305
8. Inani A., Rao R.V., Cheng B., and Woo J. Japanese Journal of Applied Physics 38 (1999) 2266
9. Galeti M., Pavanello M.A., and Martino J.A. Microelectronics Journal 37 (2006) 601
10. Young K.K. IEEE Transactions on Electron Devices 36 (1989) 504
11. Dey A., Chakravorty A., DasGupta N., and DasGupta A. IEEE Transactions on Electron Devices 55 (2008) 3442
12. Abdi M.A., Djeffal F., Arar D., and Hafiane M.L. Journal of Materials Science: Materials in Electronics 19 (2008) S248
13. Abd El-hamid H., Roig J., and Iñíguez B. Solid-State Electronics 51 (2007) 414
14. Ren Z., Venugopal R., Goasguen S., Datta S., and Lundstrom M.S. IEEE Transactions on Electron Devices 50 (2003) 1914