Evaluation of graded-channel SOI MOSFET operation at high temperatures

Microelectronics Journal

Volumn 37, Issue 7, 2006, Pages 601-607

  Galeti, Milene ^a   Pavanello, Marcelo Antonio ^a,b   Martino, João Antonio ^a,b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

Author keywords

Fully depleted; Graded channel; High temperature; New structure; SOI MOSFET

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; HIGH TEMPERATURE OPERATIONS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

FULLY DEPLETED DEVICES; GRADED CHANNEL DEVICES; NEW STRUCTURE SEMICONDUCTORS; SOI MOSFET;

MOSFET DEVICES;

EID: 33747794997     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.09.007     Document Type: Article

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