Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 414-422

  Abd El Hamid, Hamdy ^a   Roig, Jaume ^b   Iñíguez, Benjamin ^a  

^a Escola Tecnica Superior d'Enginyeria Quimica   (Spain)

^b LAAS CNRS   (France)

Author keywords

Device modeling; DIBL; Double Gate MOSFET; Gate All Around MOSFETs; Nanoscale semiconductor devices; Scaling rules; Subthreshold swing; Threshold voltage

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE;

DEVICE MODELING; DOUBLE GATE MOSFET; NANOSCALE SEMICONDUCTOR DEVICES; SCALING RULES; SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 33947698957     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.12.009     Document Type: Article

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