Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Abdi, M A ^a   Djeffal, F ^a   Arar, D ^a   Hafiane, M L ^a  

^a UNIVERSITY OF BATNA   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

AND GATES; BOLTZMANN DISTRIBUTIONS; DEVICE SIZES; DOUBLE GATES; DOUBLE-GATE; MOSFETS; NUMERICAL MODELLING; SCALING CAPABILITIES; SILICON THICKNESS; TRAP STATES;

BOLTZMANN EQUATION; DEFECT DENSITY; GALERKIN METHODS; GALLIUM ALLOYS; MOSFET DEVICES; NUMERICAL METHODS; POISSON DISTRIBUTION; POISSON EQUATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

NUMERICAL ANALYSIS;

EID: 53649098177     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9531-y     Document Type: Article

References (11)

1. J.T. Park, J.P. Colinge, IEEE Trans. Electron. Dev. 49 (12), 2229 (2002)
2. F. Djeffal, M. Chahdi, A. Benhaya, M.L. Hafyane, Solid-State Electron. 51, 56 (2007)
3. F. Djeffal, Z. Dibi, M.L. Hafyane, A. Benhaya, Mater. Sci. Eng. C 27, 1116 (2007)
4. X. Lin, C. Feng, S. Zhang, W.H. Ho, M. Chan, Solid-State Electron. 48, 2319 (2004)
5. X. Zeng, Z. Xu, J.K.O. Sin, Y. Dai, C. Wang, IEEE Trans. Electron. Dev. 48, 1010 (2001)
6. H-J. Cho, J.D. Plummer, IEEE Trans. Electron. Dev. 54, 169 (2007)
7. The International Technology Roadmap for Semiconductor (2004) Available from: Http://www.public.itrs.net
8. Q. Chen, B. Agrawal, J.D. Meindl, IEEE Trans. Electron. Dev. 49 (6), 1090 (2002)
9. H. Hayama, W.I. Milne, Solid-State Electron. 33 (2), 286 (1990)
10. H-J. Cho, J.D. Plummer, in Proceeding of IEEE International SOI Conference, Wakefield, Massachusetts, USA, October 2000
11. A.H. Hamdy, J. Roig, B. Iniguez, Solid-State Electron. 51 (2), 422 (2007)