Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges

Microelectronics Reliability

Volumn 49, Issue 4, 2009, Pages 377-381

  Djeffal, F ^a   Ghoggali, Z ^a   Dibi, Z ^a   Lakhdar, N ^a  

^a UNIVERSITY OF BATNA   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTROMAGNETIC INDUCTION; GALERKIN METHODS; GALLIUM ALLOYS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; POISSON EQUATION; TWO DIMENSIONAL;

2-D NUMERICAL SIMULATIONS; ANALYTICAL ANALYSIS; ANALYTICAL APPROACHES; CHANNEL LENGTHS; CMOS DEVICE SCALING; DOUBLE GATES; GATE-ALL-AROUND; HOT-CARRIER; HOT-CARRIER DEGRADATIONS; HOT-CARRIER EFFECTS; INTERFACE CHARGES; MOSFETS; MULTIPLE GATE MOSFETS; NANO-SCALE; NANOSCALE REGIMES; SCALING CAPABILITIES; SCALING LIMITS; SHORT-CHANNEL-EFFECTS; THEORETICAL BASIS; TWO DIMENSIONAL POISSON EQUATIONS;

CHARGE CARRIERS;

EID: 63649104701     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.12.011     Document Type: Article

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