Trade-off between inverse lithography mask complexity and lithographic performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Kim, Byung Gook ^a   Suh, Sung Soo ^a   Kim, Byung Sung ^a   Woo, Sang Gyun ^a   Cho, Han Ku ^a   Tolani, Vikram ^b   Dai, Grace ^b   Irby, Dave ^b   Wang, Kechang ^b   Xiao, Guangming ^b   Kim, David ^b   Baik, Ki Ho ^b   Gleason, Bob ^b  

^a SAMSUNG Electronics   (South Korea)

^b Luminescent Technologies Inc   (United States)

Author keywords

32nm below; Depth of focus; Inverse lithography technology; Lithographic performance; Low k1; Mask cost; MEEF; OPC; RET; SRAF

Indexed keywords

DEPTH OF FOCUS; INVERSE LITHOGRAPHY TECHNOLOGY; LITHOGRAPHIC PERFORMANCE; LOW-K1; MASK COST; MEEF; OPC; RET; SRAF;

COMMERCE; CONSTRAINED OPTIMIZATION; COSTS; MASKS; OPTIMIZATION; WINDOWS;

TECHNOLOGY;

EID: 69949177846     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824299     Document Type: Conference Paper

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