Source optimization and mask design to minimize MEEF in low k1 lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Xiao, Guangming ^a   Cecil, Tom ^a   Pang, Lingyong ^a   Gleason, Bob ^a   McCarty, John ^a  

^a Luminescent Technologies Inc   (United States)

Author keywords

Design for manufacturing (DFM); Inverse lithography technology (ILT); MEEF; RET

Indexed keywords

AEROSPACE APPLICATIONS; ARCHITECTURAL DESIGN; COMPUTER NETWORKS; MICROFLUIDICS; TECHNOLOGY;

MASK DESIGNS; MASK ERROR ENHANCEMENT FACTOR (MEEF); MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING; SHRINKING DESIGNS; SOURCE OPTIMIZATION;

MASKS;

EID: 45549093163     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793036     Document Type: Conference Paper

References (4)

1. Abrams, S. and Pang, L., "Fast inverse lithography technology", 31st Internal Symposium of Microlithography, Proc. SPIE 6154 (2006).
2. Maurer, W., "Mask specifications for 193 nm lithography," 16th Annual BACUS Symposium on Photomask Technology and Management, Proc. SPIE 2884, 562-571 (1996)
3. Schellenberg, F. M. and Mack, C., "MEEF in theory and practice", 19th Annual BACUS Symposium on Photomask Technology, Proc. SPIE 3873, 189-202 (1999)
4. Prins, S.L., et al, "Inverse Lithography as a DFM Tool: Accelerating Design Rule Development with Model-Based Assist Feature Placement, Fast Optical Proximity Correction and Lithographic Hotspot Detection", SPIE Advanced Lithography, Proc. SPIE 6924, (2008)