Inverse Lithography Technology (ILT) keep the balance between SRAF and MRC at 45and 32 -nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Pang, Linyong ^a   Liu, Yong ^a   Dam, Thuc ^a   Mihic, Kresimir ^a   Cecil, Thomas ^a   Abrams, Dan ^a  

^a Luminescent Technologies Inc   (United States)

Author keywords

Inverse Lithography Technology (ILT); Lithography; Mask Rule Compliance (MRC); Optical Proximity Correction (OPC); Photomask; Resolution Enhancement Technology (RET); Sub Resolution Assist Feature (SRAF)

Indexed keywords

LUMINESCENCE; OPTIMIZATION; PHOTOMASKS;

INVERSE LITHOGRAPHY TECHNOLOGY (ILT); MASK RULE COMPLIANCE (MRC); OPTICAL PROXIMITY CORRECTION (OPC); RESOLUTION ENHANCEMENT TECHNOLOGY (RET); SUB-RESOLUTION ASSIST FEATURE (SRAF);

LITHOGRAPHY;

LITHOGRAPHY; LUMINESCENCE; OPTIMIZATION;

EID: 42149178602     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.754568     Document Type: Conference Paper

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