A new method for RTS noise of semiconductor devices identification

IEEE Transactions on Instrumentation and Measurement

Volumn 57, Issue 6, 2008, Pages 1199-1206

  Konczakowska, Alicja ^a   Cichosz, Jacek ^a   Szewczyk, Arkadiusz ^a  

^a GDANSK UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Noise scattering pattern method (NSP method); Random telegraph signal (RTS) noise; Semiconductor devices

Indexed keywords

SCATTERING; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

NOISE SCATTERING PATTERN METHOD; RANDOM TELEGRAPH SIGNAL NOISE;

SIGNAL NOISE MEASUREMENT;

EID: 44349122337     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2007.915098     Document Type: Article

References (19)

1. D. A. Bell, Electrical Noise. New York: Van Nostrand, 1960, pp. 258-264.
2. W. H. Card and P. K. Chaudhari, "Characteristics of burst noise," Proc. IEEE, vol. 53, no. 6, pp. 652-653, Jun. 1965.
3. G. Giralt, J. C. Martin, and F. X. Mateu-Perez, "Sur un phénomène de bruit dans les transistors, caractérisé par des créneaux de courant d'amplitude constante," in Compte Rendu de l'Académie des Sciences de Paris, Dec. 1965. T. 261.
4. S. T. Hsu and R. J. Whittier, "Characterization of burst noise in silicon devices," Solid State Electron., vol. 12, no. 11, pp. 867-878, 1969.
5. S. T. Hsu, R. J. Whittier, and C. A. Head, "Physical model for burst noise in silicon devices," Solid State Electron., vol. 13, no. 7, pp. 1055-1071, 1970.
6. K. B. Cook and A. J. Broderson, "Physical origins of burst noise in transistors," Solid State Electron., vol. 14, no. 12, pp. 1237-1250, 1971.
7. R. Oren, "Discussion of various views on popcorn noise," IEEE Trans. Electron Devices, vol. ED-18, no. 12, pp. 1194-1195, Dec. 1971.
8. T. Koji, "The effect of emitter-current density on popcorn noise in transistors," IEEE Trans. Electron Devices, vol. ED-22, no. 1, pp. 24-25, Jan. 1975.
9. L. K. J. Vandamme and M. Macucci, "1/f and RTS noise in submicron devices: Faster is noisier," in Proc. UPoN: 4th Int. AIP Conf. Unsolved Problems Noise Fluctuations Phys., Biol., High Technol., 2005, vol. 800, pp. 436-443.
10. T. G. M. Kleinpenning, "On 1/f noise and random telegraph noise in very small electronic devices," Physica B, vol. 164, no. 3, pp. 331-334, 1990.
11. C. Claeys and E. Simoen, "Noise as a diagnostic tool for semiconductor material and device characterization," J. Electrochem. Soc., vol. 145, no. 6, pp. 2058-2067, 1998.
12. Z. Celik-Butler, "Measurement and analysis methods for random telegraph signals," in Proc. Adv. Experimental Methods Noise Res. Nanoscale Electron Devices, J. Sikula and M. Levinshtein, Eds. Norwell, MA: Kluwer, 2004, vol. 151, pp. 219-226.
13. M. A. Abdala and B. K. Jones, "Correlation between trap characterization by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs," Solid State Electron., vol. 35, no. 12, pp. 1713-1719, 1992.
14. B. K. Jones and G. P. Taylor, "Spectroscopy of surface states using the excess noise in a buried-channel MOS transistor," Solid State Electron., vol. 35, no. 9, pp. 1285-1289, 1992.
15. B. K. Jones, "Low-frequency noise spectroscopy," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2188-2197, Nov. 1994.
16. J. Cichosz and A. Szatkowski, "The method for burst noise detection, particularly in semiconductor devices," 2005. Patent application P-375610, Polish Patent Office (in Polish).
17. A. Konczakowska, J. Cichosz, A. Szewczyk, and B. Stawarz, "Identification of optocoupler devices with RTS noise," Fluctuation Noise Lett., vol. 6, no. 4, pp. L395-L401, 2006.
18. A. Konczakowska, J. Cichosz, and A. Szewczyk, "A new method and a virtual instrument for RTS noise of semiconductor devices identification," Bull. Pol. Acad. Sci., vol. 54, no. 4, pp. 457-460, 2006.
19. Project Ministry of Science and Information Society Technologies, 2006. No. 3 T10C 026 28.