Lithography options for the 32 nm half pitch node and beyond

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 56, Issue 8, 2009, Pages 1884-1891

  Ronse, Kurt ^a   Jansen, Philippe ^a   Gronheid, R ^a   Hendrickx, Eric ^a   Maenhoudt, M ^a   Wiaux, Vincent ^a   Goethals, Anne Marie ^a   Jonckheere, R ^a   Vandenberghe, G ^a  

^a IMEC   (Belgium)

Author keywords

193 nm immersion lithography; 22 nm half pitch node; 32 nm half pitch node; Extreme ultra violet lithography

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; LIGHT SOURCES;

193-NM IMMERSION; 22 NM HALF PITCHES; HALF PITCHES; HIGH INDEX MATERIALS; HIGH VOLUME MANUFACTURING; LINEWIDTH ROUGHNESS; LITHO-ETCH-LITHO- ETCH; SENSITIVITY SPECIFICATIONS;

COST EFFECTIVENESS;

EID: 69549086778     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2009.2028417     Document Type: Conference Paper

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