The application of high refractive index photoresist for 32nm device level imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  Conley, Will ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; IMAGING TECHNIQUES; INNOVATION; MERCURY VAPOR LAMPS; REFRACTIVE INDEX;

IMAGING RESOLUTION; IMPACTS COST; PHOTORESIST SYSTEMS; PROCESS CAPABILITY;

PHOTORESISTS;

EID: 35048815842     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.714315     Document Type: Conference Paper

References (10)

1. Masuda et al. Proc. SPIE Vol. 5376, 105,
2. Zhang et al. Proc. SPIE Vol. 5376, 103
3. Zhang et al. Proc. SPIE Vol. 5376, 101
4. Hong et al. Proc. SPIE Vol. 5376, 135
5. Cesar Garza et al. Proc. SPIE Vol. 5376, 30
6. Chris Mack, Proc SPIE 5037, 1
7. Y. Ohmura, Proc SPIE 5040, 781
8. First discussed by Mircea Dusa in a private communication at National Semiconductor, Santa Clara, CA.
9. Donis Flagello et al. International SEMATECH Immersion Lithography Workshop, Los Angles, CA January 2004.
10. Blakey et al. Proc. SPIE Vol. 5753, 827 (2005)