Sub-100 nm lithography with KrF exposure using multiple development method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 6999-7003

  Asano, Masafumi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Lithography; Multiple development; Negative tone; Photomask; Positive tone; Resist

Indexed keywords

DIFFRACTION GRATINGS; ELECTROMAGNETIC WAVE DIFFRACTION; EXCIMER LASERS; MASKS; PHOTORESISTS;

MULTIPLE DEVELOPMENT METHOD;

NANOTECHNOLOGY;

EID: 0033356184     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6999     Document Type: Article

References (14)

1. M. D. Levenson, N. S. Viswanathan and R. A. Simpson: IEEE Trans. Electron Devices ED-29 (1982) 1812.
2. T. Terasawa, N. Hasegawa, T. Kurosaki and T. Tanaka: Proc. SPIE 1088 (1989) 25.
3. A. Nitayama, T. Sato, K. Hashimoto, F. Shigemitsu and N. Nakase: Int. Electron Device Meet. Tech. Dig. (IEEE, New York, 1989) p. 57.
4. B. J. Lin: Solid State Technol. 35 (1992) 43.
5. K. Tounai, H. Tanabe, H. Nozue and K. Kasama: Proc. SPIE 1674 (1992) 753.
6. K. Kamon, T. Miyamoto, Y. Myoi, H. Tanaka and M. Tanaka: Jpn. J. Appl. Phys. 32 (1993) 239.
7. M. Noguchi, M. Muraki, Y. Iwasaki and A. Suzuki: Proc. SPIE 1674 (1992) 92.
8. N. Shiraishi, S. Hirukawa, Y. Takeuchi and N. Magome: Proc. SPIE 1674 (1992) 741.
9. D. M. Tanenbaum, C. W. Lo, M. Isaacson, H. G. Graighead, M. J. Rooks, K. Y. Lee, W. S. Huang and T. H. P. Chang: J. Vac. Sci. Technol. B14 (1996) 3829.
10. H. Ito, C. G. Willson and J. M. J. Frechet: Proc. SPIE 771 (1987) 24.
11. H. Ito and M. Ueda: Macromolecules 21 (1988) 1474.
12. H. Ito, L. A. Pederson, K. N. Chiong, S. Sonchik and C. Tsai: Proc. SPIE 1086 (1989) 11.
13. T. Azuma, K. Matsunaga, D. Kawamura, S. Mimotogi and Y. Onishi: J. Vac. Sci. Technol. B15 (1997) 2434.
14. T. Azuma, D. Kawamura, K. Matsunaga, E. Shiobara, S. Tanaka and Y. Onishi: J. Vac. Sci. Technol. B16 (1998) 3734.