Passivation of interfacial states for GaAs- and InGaAs/inp-based regrown nanostructures

Journal of Electronic Materials

Volumn 38, Issue 10, 2009, Pages 2023-2032

  Rathi, M K ^a   Tsvid, G ^a   Khandekar, A A ^a   Shin, J C ^a   Botez, D ^a   Kuech, T F ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

In situ preparation; Interfacial states; Surfaces and interfaces

Indexed keywords

CAPACITANCE VOLTAGE; CARRIER DEPLETION; EPITAXIAL REGROWTH; ETCHED STRUCTURES; EX SITU; FERMI LEVEL PINNING; GAAS; GAS PHASE CHEMISTRY; IN SITU PREPARATION; IN-SITU; INALAS; INGAAS/INP; INP; INP-BASED STRUCTURE; INTERFACIAL CHARGE; INTERFACIAL CHARGE DENSITY; INTERFACIAL STATE; INTERFACIAL STATES; LOW DENSITY; MATERIAL SYSTEMS; NANOPILLARS; NANOSCALE DEVICE; ORIENTED SAMPLE; PRE-TREATMENTS; SUPER-LATTICE STRUCTURES; SURFACES AND INTERFACES;

ELECTRIC POTENTIAL; GALLIUM ALLOYS; PASSIVATION; PHASE INTERFACES; SEMICONDUCTING GALLIUM;

SURFACES;

EID: 69249212207     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0887-z     Document Type: Article

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