Selective area etching of AlGaAs/GaAs heterostructures using AsCl3

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 674-678

  Ortion, J M ^a   Cordier, Y ^a   Garcia, J C ^a   Adam, D ^a   Champagne, M ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

SELECTIVE AREA ETCHING; SEMICONDUCTOR ETCHING;

ETCHING;

EID: 0030653363     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00653-7     Document Type: Article

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