Intersubband quantum-box semiconductor lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 491-503

  Hsu, Chia Fu ^a   O, Jeong Seok ^b   Zory, Peter ^c   Botez, Dan ^d  

^a NOKIA RESEARCH CENTER   (United States)

^b Blue Sky Research   (United States)

^c University of Florida   (United States)

^d University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON DEVICES; ELECTRON IRRADIATION; ELECTRON TRANSITIONS; INFRARED RADIATION; MIRRORS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; THERMAL EFFECTS;

BRAGG MIRROR; CONTINUOUS WAVE; ELECTRON INJECTOR; ELECTRON RELAXATION; ENHANCEMENT FACTOR; INTERSUBBAND QUANTUM BOX LASERS; INTERSUBBAND TRANSITIONS; QUANTUM CASCADE LASERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0034187167     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865104     Document Type: Article

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