AlGaAs-GaAs buried heterostructure laser with vertically etched facets and wide-bandgap optical windows by in situ C2H5Cl gas-phase etching and MOCVD regrowth

IEEE Photonics Technology Letters

Volumn 9, Issue 6, 1997, Pages 719-721

  Ikawa, Seiji ^b,c   Ogura, Mutsuo ^a,b  

^a IEEE

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c KUBOTA CORPORATION   (Japan)

Author keywords

Gas phase etching; Semiconductor device fabrication; Semiconductor growth; Semiconductor lasers

Indexed keywords

ETCHING; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COATINGS; OPTICAL WAVEGUIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

GAS PHASE ETCHING; GRADED INDEX SEPARATE CONFINEMENT STRUCTURE; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0031170115     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.584968     Document Type: Article

References (3)

1. T. Yuasa, M. Mannoh, K. Asakawa, K. Shinozaki, and M. Ishii, "Dry-etched-cavity pair-groove-substrate GaAs/AlGaAs multiquantum well lasers," Appl. Phys. Lett., vol. 48, no. 12, pp. 748-750, Mar. 24, 1986.
2. M. Ogura, "In situ etching and regrowth process for edge- and surface-emitting laser diodes with AlGaAs/GaAs buried heterostructure," J. Vac. Sci. Tech. B, vol. 13, no. 4, pp. 1529-1535, July/Aug. 1995.
3. K. Shimoyama, Y. Inoue, M. Katoh, H. Gotoh, Y. Suzuki, and H. Yajima, "A new selective MOVPE regrowth process utilizing in situ vapor phase etching for optoelectronic integrated circuits," J. Cryst. Growth, vol. 107, pp. 767-771, 1991.