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Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

Spatial localization of 1/f noise sources in AlSb/InAs high-electron- mobility transistors

(4) Andrei, Petru a Kruppa, Walter b Boos, J Brad b Bennett, Brian R b

a FAMU FSU COLLEGE OF ENGINEERING (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; EFFICIENT ALGORITHM; HOOGE PARAMETERS; INAS; LANGEVIN; LINEAR LEAST SQUARES; MESH POINTS; MICROSCOPIC MODELING; NOISE CHARACTERISTIC; NOISE CURRENT; NOISE SOURCE; NUMERICAL TECHNIQUES; OPTIMIZATION APPROACH; RANDOM SOURCES; SPATIAL DISTRIBUTION; SPATIAL LOCALIZATION;

ACOUSTIC NOISE; ALGORITHMS; INDIUM ARSENIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SIZE DISTRIBUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69149102140 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3194312 Document Type: Article

Times cited : (2)

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