Low-frequency noise characteristics of AlSb/InAsSb HEMTs

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 2079-2084

  Kruppa, W ^a   Boos, J B ^a   Bennett, B R ^a   Tinkham, B P ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

1 f noise; HEMTs; InAs; InAsSb; Low frequency noise

Indexed keywords

ACOUSTIC VARIABLES CONTROL; ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRON EMISSION; FREQUENCIES; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; LIGHTING; SUPERLATTICES; VISIBILITY;

1/F NOISE; INAS; INASSB; LOW-FREQUENCY NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3142778703     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.069     Document Type: Conference Paper

References (17)

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