Low-frequency noise in AlSb/InAs and related HEMTs

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1193-1202

  Kruppa, Walter ^a   Boos, J Brad ^a   Bennett, Brian R ^a   Papanicolaou, Nicolas A ^a   Park, Doewon ^a   Bass, Robert ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

1 f noise; High electron mobility transistors (HEMTs); Indium compounds; Microwave FETs; MODFETs; Semiconductor device noise; Semiconductor heterojunctions

Indexed keywords

ACTIVATION ENERGY; DRAIN CURRENT; HETEROJUNCTIONS; INDIUM ARSENIDE; LORENTZ FORCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

FREQUENCY NOISE; GATE BIAS; HOOGE PARAMETER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247849203     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.893658     Document Type: Article

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