Effect of channel positioning on the 1/f noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Von Haartman, Martin ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; ELECTRIC POTENTIAL; NOISE ABATEMENT; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

BACK GATE VOLTAGE; FRONT GATE OXIDE INTERFACE; FRONT GATE OXIDE INTERFACES; HOOGE PARAMETERS;

MOSFET DEVICES;

EID: 33847164876     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433772     Document Type: Article

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