Study of the morphology of the InAs-on-AISb interface

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4904-4907

  Wong, K C ^a   Yang, Celeste ^a   Thomas, Mason ^b   Blank, Hans Richard ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; INAS; INAS QUANTUM WELL; INTERFACE BONDS; INTERFACE CONFIGURATION; INTERFACE STRUCTURES; STRONG CORRELATION;

ELECTRON MOBILITY; EPITAXIAL GROWTH; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; MORPHOLOGY; SOIL CONSERVATION;

SEMICONDUCTING INDIUM;

EID: 0000972536     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366354     Document Type: Article

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