High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 611-614

  Strittmatter, A ^a   Krost, A ^b   Blasing J ^b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; X RAY SPECTROSCOPY;

DOMINANT EXCITONIC PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221304     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3.0.CO;2-1     Document Type: Article

References (7)

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