Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 659-662

  Hageman, P R ^a   Haffouz, S ^a   Kirilyuk, V ^a   Macht, L ^a   Weyher, J L ^a,b   Grzegorczyk, A ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b Polish Acedemy of Sciences   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141747352     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<659::AID-PSSA659>3.0.CO;2-O     Document Type: Article

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