Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al2O3 as a transition layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7058, Issue , 2008, Pages

  Li, Nola ^a   Wang, Shen Jie ^a   Huang, Chung Lung ^b   Feng, Zhe Chuan ^b   Valencia, Adriana ^c   Nause, Jeff ^c   Summers, Christopher ^d   Ferguson, Ian ^a,d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c Cermet Inc   (United States)

^d Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DEPTH PROFILES; ATOMIC LAYER DEPOSITION (ALD; EDGE EMISSIONS; GAN LAYERS; HIGH GROWTH TEMPERATURES; HIGH RESOLUTIONS; HIGH TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; NITROGEN SOURCES; OPTIMAL ANNEALING; OXYGEN INCORPORATIONS; POLYCRYSTAL LINES; ROOM TEMPERATURE PHOTOLUMINESCENCES; SHALLOW DONORS; TRANSITION LAYERS; WELL CRYSTALLIZED; WURTZITE; X-RAY DIFFRACTIONS; ZNO SUBSTRATES;

ALUMINUM; AMORPHOUS MATERIALS; ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; AUGER ELECTRON SPECTROSCOPY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE (FLUID); LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; VAPORS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

SUBSTRATES;

EID: 55549101278     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.797946     Document Type: Conference Paper

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